NVMFD6H840NLT1G Onsemi

The NVMFD6H840NLT1G from Onsemi is a high-performance, N-Channel dual MOSFET in an SO-8FL (DFN-8) package, designed for high-efficiency power management applications. This active component features a robust 80V drain-source voltage (V(BR)DSS) and a high continuous drain current (ID) rating of 74A, making it suitable for demanding power switching tasks. With a low on-resistance (RDS(on)) of 6.9mΩ at a 10V gate drive, it minimizes conduction losses. Its optimized gate charge (Qg) ensures fast switching performance. This MOSFET is ideal for use in synchronous rectification, DC-DC converter modules, motor control circuits, and server/telecom power systems where space-saving and thermal performance are critical.

Features

• High Current Capability: Supports a maximum continuous drain current (ID) of 74A, enabling use in high-power conversion stages.
• Low On-Resistance: Features a very low RDS(on) of 6.9mΩ (max @ VGS=10V), significantly reducing conduction losses and improving overall system efficiency.
• Optimized Switching Performance: Balanced gate charge (Qg) of 32nC (typ @ VGS=10V) allows for fast switching speeds, reducing switching losses in high-frequency applications.
• Dual N-Channel Configuration: Integrates two independent MOSFETs in a compact SO-8FL package, saving PCB space and simplifying layout for synchronous buck converters or half-bridge circuits.
• Robust Voltage Ratings: With a V(BR)DSS of 80V and a VGS max of ±20V, it offers reliable operation and good margin in 48V bus and similar intermediate voltage applications.

Technical Specifications

• Drain-Source Voltage (V(BR)DSS): 80 V (Min)
• Gate-Source Voltage (VGS): ±20 V (Max)
• Continuous Drain Current (ID): 74 A (Max)
• On-Resistance (RDS(on)): 6.9 mΩ (Max @ VGS = 10 V)
• Total Gate Charge (Qg): 32 nC (Typ @ VGS = 10 V)
• Input Capacitance (Ciss): 2002 pF (Typ)
• Maximum Power Dissipation (PD): 90 W
• Channel Type / Configuration: N-Channel / Dual

Pin Configuration and Functions

• Pin 1: Source 1 (S1) - Source terminal for MOSFET 1.
• Pin 2: Gate 1 (G1) - Gate control terminal for MOSFET 1.
• Pin 3: Source 1 (S1) - Source terminal for MOSFET 1 (connected internally to Pin 1).
• Pin 4: Drain 1 (D1) - Drain terminal for MOSFET 1.
• Pin 5: Drain 2 (D2) - Drain terminal for MOSFET 2.
• Pin 6: Source 2 (S2) - Source terminal for MOSFET 2 (connected internally to Pin 7).
• Pin 7: Gate 2 (G2) - Gate control terminal for MOSFET 2.
• Pin 8: Source 2 (S2) - Source terminal for MOSFET 2.

Typical Applications

• Synchronous Buck Converters: As the low-side and high-side switch in high-current DC-DC voltage regulators.
• Motor Drive and Control: In H-bridge or half-bridge circuits for brushed DC or stepper motor control.
• Server & Telecom Power Supplies: For synchronous rectification in secondary-side circuits to improve efficiency.
• Battery Protection & Management: As a high-side or low-side switch in discharge/charge control paths.
• Power OR-ing and Load Switching: For redundant power supply systems and hot-swap applications.

Equivalent / Alternative Parts

• NVMFD6H840NLWFT1G (Onsemi): Same electrical parameters and package family, potentially differing in tape and reel packaging details.
• Other models within Onsemi NVMFD6 series: Designers should compare V(BR)DSS, ID, and RDS(on) ratings to find a pin-to-pin alternative for different voltage/current needs.

Advantages

• Superior Power Density: The combination of high current (74A) and very low RDS(on) in a compact SO-8FL package enables more power to be handled in a smaller footprint compared to larger discrete solutions.
• Enhanced Thermal Performance: The DFN-style package (SO-8FL) features an exposed thermal pad (not listed in pins but typical for this case outline), which improves heat dissipation compared to standard SO-8, supporting the 90W power rating.
• Design Simplification: The dual, common-source configuration integrates two matched MOSFETs, reducing component count and simplifying PCB layout for synchronous rectifier and bridge topologies.

Limitations

• Gate Drive Voltage Requirement: To achieve the lowest RDS(on), a gate drive voltage of 10V is recommended. Performance at lower VGS (e.g., 4.5V) is specified but with higher resistance, which may not be suitable for all low-voltage logic interfaces.
• Parasitic Capacitance: The input capacitance (Ciss) is relatively high at ~2000pF, requiring a gate driver with sufficient peak current to achieve very fast switching speeds, which adds complexity to the drive circuit.
• Thermal Management Dependency: Achieving the full 90W power dissipation rating is contingent upon excellent PCB thermal design, including the use of a thermal via array under the exposed pad.

Package Information

SO-8FL Dual / DFN-8 package (case outline 506BT), surface mount. This package typically incorporates an exposed pad on the bottom for enhanced thermal dissipation.

Manufacturer Information

Onsemi (ON Semiconductor) is a leading global supplier of semiconductor-based solutions, focused on key end markets including automotive, industrial, cloud computing, and consumer applications. The company is known for its robust portfolio of power management, analog, sensor, and connectivity products designed to enable energy efficiency and system reliability.

Design-in Tips

• Mandatory Thermal Pad Connection: The exposed pad must be soldered to a copper pour on the PCB with multiple thermal vias connected to an internal ground plane to effectively dissipate heat and realize the stated PD rating.
• Gate Drive Optimization: Use a dedicated gate driver IC capable of sourcing/sinking several amps of peak current to quickly charge and discharge the high Ciss, minimizing switching transition times and losses.
• Parasitic Inductance Minimization: Keep the high-current loop paths (especially from drain to source) as short and wide as possible to minimize parasitic inductance, which can cause voltage spikes and ringing during switching.

Lifecycle Status & PCN/PDN Notes

Lifecycle Status: Active. No product change notifications (PCN) or product discontinuation notices (PDN) are referenced in the provided data.