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TO-251-3

(Total of 842 parts)
Mfr NoDescriptionManufacturerCategoryInventoryAdd To Bom
IPS60R280PFD7SAKMA1IPS60R280PFD7SAKMA1Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) IPAK TubeInfineon TechnologiesSingle FETs, MOSFETs5851
IPS60R1K0PFD7SAKMA1IPS60R1K0PFD7SAKMA1Trans MOSFET N-CH 600V 4.7A 3-Pin(3+Tab) IPAK TubeInfineon TechnologiesSingle FETs, MOSFETs6447
IPS60R210PFD7SAKMA1IPS60R210PFD7SAKMA1Trans MOSFET N-CH 650V 16A 3-Pin(3+Tab) IPAK SL TubeInfineon TechnologiesSingle FETs, MOSFETs4480
2SA2039-E2SA2039-EBagged PNP Bipolar Junction Transistor for General Purpose Applications, 50V, 5A, 800mW, 3-Pin(3+Tab) IPAK ConfigurationonsemiSingle Bipolar Transistors7276
2SA2040-E2SA2040-ETrans GP BJT PNP 50V 8A 1000mW 3-Pin(3+Tab) IPAK BagOnsemiSingle Bipolar Transistors6154
2SB1202T-E2SB1202T-EBipolar (BJT) Transistor PNP 50 V 3 A 150MHz 1 W Through Hole TPOnsemiSingle Bipolar Transistors5493
2SB1203S-E2SB1203S-ETrans GP BJT PNP 50V 5A 1000mW 3-Pin(3+Tab) IPAK BagonsemiSingle Bipolar Transistors5670
IPU80R1K4P7AKMA1IPU80R1K4P7AKMA1N-Channel 800 V 4A (Tc) 32W (Tc) Through Hole PG-TO251-3-21Infineon TechnologiesSingle FETs, MOSFETs7354
MJD45H11-1GMJD45H11-1GPNP Bipolar Junction Transistor with 80V Voltage CapabilityOnsemiSingle Bipolar Transistors6440
S4004VS2TPS4004VS2TPThyristor SCR 400V 30A 3-Pin(3+Tab) TO-251 TubeLittelfuseSCRs5999
IPS80R2K4P7AKMA1IPS80R2K4P7AKMA1MOSFET LOW POWER_NEWInfineon TechnologiesSingle FETs, MOSFETs7614
IPU80R1K2P7AKMA1IPU80R1K2P7AKMA1MOSFET LOW POWER_NEWInfineon TechnologiesSingle FETs, MOSFETs6910
IPS70R600P7SAKMA1IPS70R600P7SAKMA1Advanced power semiconductor device ideal for high-voltage and high-current applicationsInfineon TechnologiesSingle FETs, MOSFETs6514
IPS70R1K4P7SAKMA1IPS70R1K4P7SAKMA1Experience superior reliability with Infineon IPS70R1K4P7SAKMA1, TUInfineon TechnologiesSingle FETs, MOSFETs7763
IPU80R2K0P7AKMA1IPU80R2K0P7AKMA1MOSFET LOW POWER_NEWInfineon TechnologiesSingle FETs, MOSFETs6620
IPS80R2K0P7AKMA1IPS80R2K0P7AKMA1MOSFET LOW POWER_NEWInfineon TechnologiesSingle FETs, MOSFETs7582
IPU80R2K4P7AKMA1IPU80R2K4P7AKMA1Trans MOSFET N-CH 800V 2.5A 3-Pin(3+Tab) TO-251 TubeInfineon TechnologiesSingle FETs, MOSFETs5069
2SA2126-E2SA2126-ETrans GP BJT PNP 50V 3A 800mW 3-Pin(3+Tab) TP BagOnsemiSingle Bipolar Transistors6445
TN1215-800HTN1215-800H12A standard SCRsSTMicroelectronics NVSCRs5206
IPS60R3K4CEAKMA1IPS60R3K4CEAKMA1Trans MOSFET N-CH 600V 2.6A 4-Pin(3+Tab) TO-251 TubeInfineon TechnologiesSingle FETs, MOSFETs5485
IPU60R1K0CEAKMA2IPU60R1K0CEAKMA2Trans MOSFET N-CH 600V 6.8A 3-Pin(3+Tab) TO-251 TubeInfineon TechnologiesSingle FETs, MOSFETs4686
SPU04N60S5SPU04N60S5N-Channel 600 V 4.5A (Tc) 50W (Tc) Through Hole PG-TO251-3-21Infineon TechnologiesSingle FETs, MOSFETs7352
SPU07N60S5SPU07N60S5N-Channel 600 V 7.3A (Tc) 83W (Tc) Through Hole PG-TO251-3-21Infineon TechnologiesSingle FETs, MOSFETs4921
2SB1215S-H2SB1215S-HBipolar Transistor, -100V, -3A, Low VCE(sat), PNP Single, TP/TP-FAOnsemiSingle Bipolar Transistors7157
IRLU2905ZPBFIRLU2905ZPBFN-Channel 55 V 42A (Tc) 110W (Tc) Through Hole IPAK (TO-251AA)Infineon TechnologiesSingle FETs, MOSFETs5644
IRFU7546PBFIRFU7546PBFTrans MOSFET N-CH Si 60V 71A 3-Pin(3+Tab) IPAK TubeInfineon TechnologiesSingle FETs, MOSFETs5964
IRFU7540PBFIRFU7540PBFTrans MOSFET N-CH Si 60V 110A 3-Pin(3+Tab) IPAK TubeInfineon TechnologiesSingle FETs, MOSFETs4491
IRFU1018EPBFIRFU1018EPBFTrans MOSFET N-CH Si 60V 79A 3-Pin(3+Tab) IPAK TubeInfineon TechnologiesSingle FETs, MOSFETs5346
IRFU3806PBFIRFU3806PBFIdeal for switching and amplifying low-voltage DC signals efficientlInfineon TechnologiesSingle FETs, MOSFETs4208
2SB1215S-E2SB1215S-EBipolar Transistor, -100V, -3A, Low VCE(sat), PNP Single, TP/TP-FAonsemiSingle Bipolar Transistors4527
IPU60R1K5CEAKMA2IPU60R1K5CEAKMA2High-power N-channel MOSFET for reliable switching applications up toInfineon TechnologiesSingle FETs, MOSFETs5447
IPS60R800CEAKMA1IPS60R800CEAKMA1Trans MOSFET N-CH 600V 8.4A 3-Pin(3+Tab) TO-251 TubeInfineon TechnologiesSingle FETs, MOSFETs7800
IPS60R1K5CEAKMA1IPS60R1K5CEAKMA1Trans MOSFET N-CH 600V 5A 3-Pin(3+Tab) TO-251 TubeInfineon TechnologiesSingle FETs, MOSFETs7873
SPU02N60C3BKMA1SPU02N60C3BKMA1High-power switching device for DC/DC converters and motor drivesInfineon TechnologiesSingle FETs, MOSFETs6960
IPS60R600PFD7SAKMA1IPS60R600PFD7SAKMA1Trans MOSFET N-CH 600V 6A 3-Pin(3+Tab) IPAK TubeInfineon TechnologiesSingle FETs, MOSFETs5874
IPS60R360PFD7SAKMA1IPS60R360PFD7SAKMA1Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) IPAK TubeInfineon TechnologiesSingle FETs, MOSFETs6156
TN1215-600HTN1215-600HSCRs 12 Amp 600 VoltSTMicroelectronics NVSCRs4310
2SC4027S-H2SC4027S-HTrans GP BJT NPN 160V 1.5A 1000mW 3-Pin(3+Tab) TP BagOnsemiSingle Bipolar Transistors6593
NTD25P03L1NTD25P03L1Single P-Channel Logic Level Power MOSFET -30V, -25A, 72mΩonsemiSingle FETs, MOSFETs4730
IPU60R2K1CEAKMA1IPU60R2K1CEAKMA1CoolMOSTM CE Power Transistor for high-voltage applicationsInfineon TechnologiesSingle FETs, MOSFETs6428
2SC4135S-E2SC4135S-E<p>2SA1593/2SC4135 is Bipolar Transistor, (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA for High-Voltage Switching Applications.</p>OnsemiSingle Bipolar Transistors5444
IPS60R650CEAKMA1IPS60R650CEAKMA1N-Channel 600 V 9.9A (Tj) 82W (Tc) Through Hole PG-TO251-3Infineon TechnologiesSingle FETs, MOSFETs6503
SPU02N60S5BKMA1SPU02N60S5BKMA1N-Channel 600 V 1.8A (Tc) 25W (Tc) Through Hole PG-TO251-3-21Infineon TechnologiesSingle FETs, MOSFETs6337
IPS60R2K1CEAKMA1IPS60R2K1CEAKMA1N-Channel 600 V 3.7A (Tj) 38W (Tc) Through Hole PG-TO251-3Infineon TechnologiesSingle FETs, MOSFETs6072
IPS65R650CEAKMA1IPS65R650CEAKMA1Trans MOSFET N-CH 650V 10.1A 3-Pin(3+Tab) TO-251 TubeInfineon TechnologiesSingle FETs, MOSFETs5410
IPS70R360P7SAKMA1IPS70R360P7SAKMA1Advanced MOSFET Solution for Efficient Energy TransfInfineon TechnologiesSingle FETs, MOSFETs4121
IRFU3410PBFIRFU3410PBFTrans MOSFET N-CH 100V 31A 3-Pin(3+Tab) IPAK TubeInfineon TechnologiesSingle FETs, MOSFETs7654
IQE006NE2LM5CGATMA1IQE006NE2LM5CGATMA1MOSFET TRENCH <= 40VInfineon TechnologiesSingle FETs, MOSFETs7353
MJD42C1MJD42C16.0 A, 100 V PNP Bipolar Power TransistorOnsemiSingle Bipolar Transistors5991
IPS65R950C6IPS65R950C6Trans MOSFET N-CH 700V 4.5A 3-Pin(3+Tab) TO-251 TubeInfineon TechnologiesSingle FETs, MOSFETs6025
MJD45H11-001MJD45H11-001Bipolar (BJT) Transistor PNP 80 V 8 A 90MHz 1.75 W Through Hole I-PAKonsemiSingle Bipolar Transistors5886
MJD122-1MJD122-1Bipolar (BJT) Transistor NPN - Darlington 100 V 8 A 20 W Through Hole TO-251 (IPAK)STMicroelectronics NVSingle Bipolar Transistors5019
MJD253-001MJD253-001<p>The Bipolar Power Transistor is designed for low voltage, low power, high gain audio amplifier applications.</p>OnsemiSingle Bipolar Transistors4285
NTD18N06L-1GNTD18N06L-1GN-Channel 60 V 18A (Ta) 2.1W (Ta), 55W (Tj) Through Hole I-PAKOnsemiSingle FETs, MOSFETs4513
NTD20N06L-1GNTD20N06L-1GN-Channel 60 V 20A (Ta) 1.36W (Ta), 60W (Tj) Through Hole I-PAKOnsemiSingle FETs, MOSFETs5794
MJD44H11-001MJD44H11-001Bipolar (BJT) Transistor NPN 80 V 8 A 85MHz 1.75 W Through Hole I-PAKOnsemiSingle Bipolar Transistors4784
Q4004V4TPQ4004V4TPTRIAC 400V 55A 3-Pin(3+Tab) TO-251 TubeLittelfuseTRIACs7103
2SC5706-E2SC5706-ETrans GP BJT NPN 50V 5A 800mW 3-Pin(3+Tab) IPAK BagOnsemiSingle Bipolar Transistors5904
IPS65R400CEAKMA1IPS65R400CEAKMA1N-Channel 650 V 15.1A (Tc) 118W (Tc) Through Hole PG-TO251-3Infineon TechnologiesSingle FETs, MOSFETs7737
IPS65R1K4C6AKMA1IPS65R1K4C6AKMA1MOSFET N-Ch 700V 3.2A IPAK-3Infineon TechnologiesSingle FETs, MOSFETs7448

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About TO-251-3

The TO-251-3 is a type of surface-mount device (SMD) package commonly used for electronic components such as transistors, voltage regulators, and other power semiconductor devices. It is also known by other names like DPAK (Discrete Package) or SOT-428. This package is designed to provide a compact and efficient solution for mounting components on printed circuit boards (PCBs) while ensuring good thermal and electrical performance.

Key Features of TO-251-3:

  1. Three Leads: The "3" in TO-251-3 indicates that the package has three leads (pins). These leads are typically used for the gate, source, and drain in MOSFETs, or for the base, emitter, and collector in bipolar transistors.

  2. Surface-Mount Design: The TO-251-3 is a surface-mount package, meaning it is soldered directly onto the surface of a PCB, which saves space compared to through-hole packages.

  3. Thermal Pad: The package includes a large thermal pad on the bottom, which helps dissipate heat generated by the component. This pad is usually soldered to a corresponding pad on the PCB to improve thermal management.

  4. Compact Size: The TO-251-3 is relatively small, making it suitable for applications where space is limited. Its compact design is ideal for modern electronic devices that require high-density PCB layouts.

  5. High Power Handling: Despite its small size, the TO-251-3 is capable of handling relatively high power levels, making it suitable for power management applications.

Applications:

The TO-251-3 package is widely used in various electronic applications, including: - Power Supplies: For components like voltage regulators and switching transistors. - Motor Control: In circuits that drive motors, where efficient power handling is crucial. - LED Lighting: In drivers and control circuits for LED lighting systems. - Consumer Electronics: In devices like smartphones, tablets, and other portable electronics where space and efficiency are critical.

Advantages:

  • Efficient Heat Dissipation: The thermal pad ensures that heat is effectively transferred away from the component, reducing the risk of overheating.
  • Space-Saving: Its small footprint allows for more compact PCB designs.
  • Ease of Assembly: The surface-mount design simplifies the assembly process, especially in automated manufacturing environments.

Considerations:

  • Soldering: Proper soldering techniques are essential to ensure a reliable connection, particularly for the thermal pad.
  • Thermal Management: Adequate PCB design, including the use of thermal vias and heat sinks, may be necessary to maximize the thermal performance of the TO-251-3 package.

In summary, the TO-251-3 is a versatile and widely used package for power semiconductor devices, offering a balance of compact size, efficient thermal management, and high power handling capabilities.