TO-251-3
(Total of 842 parts)Mfr No | Description | Manufacturer | Category | Inventory | Add To Bom |
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![]() | Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) IPAK Tube | Infineon Technologies | Single FETs, MOSFETs | 5851 | |
![]() | Trans MOSFET N-CH 600V 4.7A 3-Pin(3+Tab) IPAK Tube | Infineon Technologies | Single FETs, MOSFETs | 6447 | |
![]() | Trans MOSFET N-CH 650V 16A 3-Pin(3+Tab) IPAK SL Tube | Infineon Technologies | Single FETs, MOSFETs | 4480 | |
![]() | Bagged PNP Bipolar Junction Transistor for General Purpose Applications, 50V, 5A, 800mW, 3-Pin(3+Tab) IPAK Configuration | onsemi | Single Bipolar Transistors | 7276 | |
![]() | Trans GP BJT PNP 50V 8A 1000mW 3-Pin(3+Tab) IPAK Bag | Onsemi | Single Bipolar Transistors | 6154 | |
![]() | Bipolar (BJT) Transistor PNP 50 V 3 A 150MHz 1 W Through Hole TP | Onsemi | Single Bipolar Transistors | 5493 | |
![]() | Trans GP BJT PNP 50V 5A 1000mW 3-Pin(3+Tab) IPAK Bag | onsemi | Single Bipolar Transistors | 5670 | |
![]() | N-Channel 800 V 4A (Tc) 32W (Tc) Through Hole PG-TO251-3-21 | Infineon Technologies | Single FETs, MOSFETs | 7354 | |
![]() | PNP Bipolar Junction Transistor with 80V Voltage Capability | Onsemi | Single Bipolar Transistors | 6440 | |
![]() | Thyristor SCR 400V 30A 3-Pin(3+Tab) TO-251 Tube | Littelfuse | SCRs | 5999 | |
![]() | MOSFET LOW POWER_NEW | Infineon Technologies | Single FETs, MOSFETs | 7614 | |
![]() | MOSFET LOW POWER_NEW | Infineon Technologies | Single FETs, MOSFETs | 6910 | |
![]() | Advanced power semiconductor device ideal for high-voltage and high-current applications | Infineon Technologies | Single FETs, MOSFETs | 6514 | |
![]() | Experience superior reliability with Infineon IPS70R1K4P7SAKMA1, TU | Infineon Technologies | Single FETs, MOSFETs | 7763 | |
![]() | MOSFET LOW POWER_NEW | Infineon Technologies | Single FETs, MOSFETs | 6620 | |
![]() | MOSFET LOW POWER_NEW | Infineon Technologies | Single FETs, MOSFETs | 7582 | |
![]() | Trans MOSFET N-CH 800V 2.5A 3-Pin(3+Tab) TO-251 Tube | Infineon Technologies | Single FETs, MOSFETs | 5069 | |
![]() | Trans GP BJT PNP 50V 3A 800mW 3-Pin(3+Tab) TP Bag | Onsemi | Single Bipolar Transistors | 6445 | |
![]() | 12A standard SCRs | STMicroelectronics NV | SCRs | 5206 | |
![]() | Trans MOSFET N-CH 600V 2.6A 4-Pin(3+Tab) TO-251 Tube | Infineon Technologies | Single FETs, MOSFETs | 5485 | |
![]() | Trans MOSFET N-CH 600V 6.8A 3-Pin(3+Tab) TO-251 Tube | Infineon Technologies | Single FETs, MOSFETs | 4686 | |
![]() | N-Channel 600 V 4.5A (Tc) 50W (Tc) Through Hole PG-TO251-3-21 | Infineon Technologies | Single FETs, MOSFETs | 7352 | |
![]() | N-Channel 600 V 7.3A (Tc) 83W (Tc) Through Hole PG-TO251-3-21 | Infineon Technologies | Single FETs, MOSFETs | 4921 | |
![]() | Bipolar Transistor, -100V, -3A, Low VCE(sat), PNP Single, TP/TP-FA | Onsemi | Single Bipolar Transistors | 7157 | |
![]() | N-Channel 55 V 42A (Tc) 110W (Tc) Through Hole IPAK (TO-251AA) | Infineon Technologies | Single FETs, MOSFETs | 5644 | |
![]() | Trans MOSFET N-CH Si 60V 71A 3-Pin(3+Tab) IPAK Tube | Infineon Technologies | Single FETs, MOSFETs | 5964 | |
![]() | Trans MOSFET N-CH Si 60V 110A 3-Pin(3+Tab) IPAK Tube | Infineon Technologies | Single FETs, MOSFETs | 4491 | |
![]() | Trans MOSFET N-CH Si 60V 79A 3-Pin(3+Tab) IPAK Tube | Infineon Technologies | Single FETs, MOSFETs | 5346 | |
![]() | Ideal for switching and amplifying low-voltage DC signals efficientl | Infineon Technologies | Single FETs, MOSFETs | 4208 | |
![]() | Bipolar Transistor, -100V, -3A, Low VCE(sat), PNP Single, TP/TP-FA | onsemi | Single Bipolar Transistors | 4527 | |
![]() | High-power N-channel MOSFET for reliable switching applications up to | Infineon Technologies | Single FETs, MOSFETs | 5447 | |
![]() | Trans MOSFET N-CH 600V 8.4A 3-Pin(3+Tab) TO-251 Tube | Infineon Technologies | Single FETs, MOSFETs | 7800 | |
![]() | Trans MOSFET N-CH 600V 5A 3-Pin(3+Tab) TO-251 Tube | Infineon Technologies | Single FETs, MOSFETs | 7873 | |
![]() | High-power switching device for DC/DC converters and motor drives | Infineon Technologies | Single FETs, MOSFETs | 6960 | |
![]() | Trans MOSFET N-CH 600V 6A 3-Pin(3+Tab) IPAK Tube | Infineon Technologies | Single FETs, MOSFETs | 5874 | |
![]() | Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) IPAK Tube | Infineon Technologies | Single FETs, MOSFETs | 6156 | |
![]() | SCRs 12 Amp 600 Volt | STMicroelectronics NV | SCRs | 4310 | |
![]() | Trans GP BJT NPN 160V 1.5A 1000mW 3-Pin(3+Tab) TP Bag | Onsemi | Single Bipolar Transistors | 6593 | |
![]() | Single P-Channel Logic Level Power MOSFET -30V, -25A, 72mΩ | onsemi | Single FETs, MOSFETs | 4730 | |
![]() | CoolMOSTM CE Power Transistor for high-voltage applications | Infineon Technologies | Single FETs, MOSFETs | 6428 | |
![]() | <p>2SA1593/2SC4135 is Bipolar Transistor, (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA for High-Voltage Switching Applications.</p> | Onsemi | Single Bipolar Transistors | 5444 | |
![]() | N-Channel 600 V 9.9A (Tj) 82W (Tc) Through Hole PG-TO251-3 | Infineon Technologies | Single FETs, MOSFETs | 6503 | |
![]() | N-Channel 600 V 1.8A (Tc) 25W (Tc) Through Hole PG-TO251-3-21 | Infineon Technologies | Single FETs, MOSFETs | 6337 | |
![]() | N-Channel 600 V 3.7A (Tj) 38W (Tc) Through Hole PG-TO251-3 | Infineon Technologies | Single FETs, MOSFETs | 6072 | |
![]() | Trans MOSFET N-CH 650V 10.1A 3-Pin(3+Tab) TO-251 Tube | Infineon Technologies | Single FETs, MOSFETs | 5410 | |
![]() | Advanced MOSFET Solution for Efficient Energy Transf | Infineon Technologies | Single FETs, MOSFETs | 4121 | |
![]() | Trans MOSFET N-CH 100V 31A 3-Pin(3+Tab) IPAK Tube | Infineon Technologies | Single FETs, MOSFETs | 7654 | |
![]() | MOSFET TRENCH <= 40V | Infineon Technologies | Single FETs, MOSFETs | 7353 | |
![]() | 6.0 A, 100 V PNP Bipolar Power Transistor | Onsemi | Single Bipolar Transistors | 5991 | |
![]() | Trans MOSFET N-CH 700V 4.5A 3-Pin(3+Tab) TO-251 Tube | Infineon Technologies | Single FETs, MOSFETs | 6025 | |
![]() | Bipolar (BJT) Transistor PNP 80 V 8 A 90MHz 1.75 W Through Hole I-PAK | onsemi | Single Bipolar Transistors | 5886 | |
![]() | Bipolar (BJT) Transistor NPN - Darlington 100 V 8 A 20 W Through Hole TO-251 (IPAK) | STMicroelectronics NV | Single Bipolar Transistors | 5019 | |
![]() | <p>The Bipolar Power Transistor is designed for low voltage, low power, high gain audio amplifier applications.</p> | Onsemi | Single Bipolar Transistors | 4285 | |
![]() | N-Channel 60 V 18A (Ta) 2.1W (Ta), 55W (Tj) Through Hole I-PAK | Onsemi | Single FETs, MOSFETs | 4513 | |
![]() | N-Channel 60 V 20A (Ta) 1.36W (Ta), 60W (Tj) Through Hole I-PAK | Onsemi | Single FETs, MOSFETs | 5794 | |
![]() | Bipolar (BJT) Transistor NPN 80 V 8 A 85MHz 1.75 W Through Hole I-PAK | Onsemi | Single Bipolar Transistors | 4784 | |
![]() | TRIAC 400V 55A 3-Pin(3+Tab) TO-251 Tube | Littelfuse | TRIACs | 7103 | |
![]() | Trans GP BJT NPN 50V 5A 800mW 3-Pin(3+Tab) IPAK Bag | Onsemi | Single Bipolar Transistors | 5904 | |
![]() | N-Channel 650 V 15.1A (Tc) 118W (Tc) Through Hole PG-TO251-3 | Infineon Technologies | Single FETs, MOSFETs | 7737 | |
![]() | MOSFET N-Ch 700V 3.2A IPAK-3 | Infineon Technologies | Single FETs, MOSFETs | 7448 |
Other Packages
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About TO-251-3
The TO-251-3 is a type of surface-mount device (SMD) package commonly used for electronic components such as transistors, voltage regulators, and other power semiconductor devices. It is also known by other names like DPAK (Discrete Package) or SOT-428. This package is designed to provide a compact and efficient solution for mounting components on printed circuit boards (PCBs) while ensuring good thermal and electrical performance.
Key Features of TO-251-3:
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Three Leads: The "3" in TO-251-3 indicates that the package has three leads (pins). These leads are typically used for the gate, source, and drain in MOSFETs, or for the base, emitter, and collector in bipolar transistors.
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Surface-Mount Design: The TO-251-3 is a surface-mount package, meaning it is soldered directly onto the surface of a PCB, which saves space compared to through-hole packages.
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Thermal Pad: The package includes a large thermal pad on the bottom, which helps dissipate heat generated by the component. This pad is usually soldered to a corresponding pad on the PCB to improve thermal management.
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Compact Size: The TO-251-3 is relatively small, making it suitable for applications where space is limited. Its compact design is ideal for modern electronic devices that require high-density PCB layouts.
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High Power Handling: Despite its small size, the TO-251-3 is capable of handling relatively high power levels, making it suitable for power management applications.
Applications:
The TO-251-3 package is widely used in various electronic applications, including: - Power Supplies: For components like voltage regulators and switching transistors. - Motor Control: In circuits that drive motors, where efficient power handling is crucial. - LED Lighting: In drivers and control circuits for LED lighting systems. - Consumer Electronics: In devices like smartphones, tablets, and other portable electronics where space and efficiency are critical.
Advantages:
- Efficient Heat Dissipation: The thermal pad ensures that heat is effectively transferred away from the component, reducing the risk of overheating.
- Space-Saving: Its small footprint allows for more compact PCB designs.
- Ease of Assembly: The surface-mount design simplifies the assembly process, especially in automated manufacturing environments.
Considerations:
- Soldering: Proper soldering techniques are essential to ensure a reliable connection, particularly for the thermal pad.
- Thermal Management: Adequate PCB design, including the use of thermal vias and heat sinks, may be necessary to maximize the thermal performance of the TO-251-3 package.
In summary, the TO-251-3 is a versatile and widely used package for power semiconductor devices, offering a balance of compact size, efficient thermal management, and high power handling capabilities.