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IGBT Transistors

Insulated Gate Bipolar Transistors, commonly known as IGBTs, are semiconductors that combine the features of bipolar junction transistors (BJTs) and metal-oxide-semiconductor field-effect transistors (MOSFETs). IGBTs are widely used in power electronics applications because they handle high voltage and current levels. These transistors are crucial in applications such as motor drives, inverters, power supplies, and induction heating systems.
IGBT transistors possess key characteristics that make them essential for power electronic applications. Featuring a voltage-controlled gate similar to MOSFETs, IGBTs enable precise control over conductivity and current flow. Notably, their high voltage handling capacity makes them suitable for applications demanding elevated power and voltage, such as power inverters. IGBTs efficiently modulate output waveforms with fast switching speeds, reducing switching losses. Their ability to handle high currents positions them well for applications requiring significant power, including motor control and power amplifiers. IGBTs exhibit bipolar conduction, combining MOSFET and BJT advantages. Functionally, they serve in power amplification for applications like audio amplifiers, motor drives for industrial machinery and electric vehicles, inverters for DC to AC conversion, induction heating systems in cooking appliances, and power supplies for stable and efficient electronic device operation.
LoveChip offers a diverse range of IGBT Transistors from top manufacturers, including Infineon, STMicroelectronics, Mitsubishi Electric, and Fairchild Semiconductor. Explore our inventory today to harness the power, efficiency, and versatility of IGBT Transistors from LoveChip to your electronic designs. 

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NGTB40N65FL2WG

NGTB40N65FL2WG

High-power transistor ideal for motor control and power supply applications

OnsemiTO-247-3

STGF19NC60WD

STGF19NC60WD

32W 14A 600V TO-220FP IGBTs ROHS

STMicroelectronics NVTO-220-3

STGW45NC60VD

STGW45NC60VD

Trans IGBT Chip N-CH 600V 90A 270W 3-Pin(3+Tab) TO-247 Tube

STMicroelectronics NVTO-247-3

STGW50HF60S

STGW50HF60S

Compact TO-247 package for reduced space requirements

STMicroelectronics NVTO-247-3

STGWA40N120KD

STGWA40N120KD

N-Type Insulated Gate Bipolar Transistor Silicon Chip

STMicroelectronics NVTO-247-3

STGWA60NC60WDR

STGWA60NC60WDR

340W 130A 600V TO-247 IGBTs ROHS

STMicroelectronics NVTO-247-3

STGWF40V60DF

STGWF40V60DF

IGBT Transistors IGBT Power Bipolar

STMicroelectronics NVTO-3

SGW30N60HSFKSA1

SGW30N60HSFKSA1

Robust and reliable IGBT transistor for industrial and commercial power electronic system

Infineon TechnologiesTO-247-3

TIG030TS-TL-E

TIG030TS-TL-E

LIGHT-CONTROLLING FLASH

OnsemiTSSOP-8

TIG052TS-TL-E

TIG052TS-TL-E

Flash control IGBT transistors

onsemiTSSOP-8

AUIRG4BC30SSTRL

AUIRG4BC30SSTRL

High-speed switching transistor for industrial automation

Infineon TechnologiesTO-263-3

FGD3N60LSDTM-T

FGD3N60LSDTM-T

IGBT, 600V, 3A, 1.2V, DPAK, Planar

OnsemiTO-252-3

FGH40T65SHD-F155

FGH40T65SHD-F155

N-channel IGBT chip rated for 650V and 80A in a TO-247 package

OnsemiTO-247-3

FGH40T65SQD-F155

FGH40T65SQD-F155

IGBT Trench Field Stop 650 V 80 A 238 W Through Hole TO-247-3

OnsemiTO-247-3

IGW08T120FKSA1

IGW08T120FKSA1

IGBT NPT, Trench Field Stop 1200 V 16 A 70 W Through Hole PG-TO247-3-1

Infineon TechnologiesTO-247-3

IKP15N60TXKSA1

IKP15N60TXKSA1

Trans IGBT Chip N-CH 600V 26A 130W 3-Pin(3+Tab) TO-220AB Tube

Infineon TechnologiesTO-220-3

IKW40N65RH5XKSA1

IKW40N65RH5XKSA1

IGBT Trench Field Stop 650 V 74 A 250 W Through Hole PG-TO247-3

Infineon TechnologiesTO-247-3

IKW15N120T2FKSA1

IKW15N120T2FKSA1

IGBT Trench 1200 V 30 A 235 W Through Hole PG-TO247-3-1

Infineon TechnologiesTO-247-3

IKP30N65H5XKSA1

IKP30N65H5XKSA1

IGBT Transistors INDUSTRY 14

Infineon TechnologiesTO-220-3

IKW50N65ES5XKSA1

IKW50N65ES5XKSA1

IGBT Trench 650 V 80 A 274 W Through Hole PG-TO247-3

Infineon TechnologiesTO-247-3

STGD7NB60KT4

STGD7NB60KT4

IGBT 600 V 14 A 70 W Surface Mount DPAK

STMicroelectronics NVTO-252-3

FGD3245G2-F085V

FGD3245G2-F085V

N-Channel Ignition IGBT Chip Automotive AEC-Q101

OnsemiTO-252-3

FGD3325G2-F085V

FGD3325G2-F085V

Trans IGBT Chip N-CH 250V 41A 150W 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101

OnsemiTO-252-3

FGD3440G2-F085V

FGD3440G2-F085V

N-Channel Ignition IGBT Chip

OnsemiTO-252-3

FGH15T120SMD-F155

FGH15T120SMD-F155

IGBT Transistors 1200V, 15A, Field Stop Trench IGBT

onsemiTO-247-3

FGH25T120SMD-F155

FGH25T120SMD-F155

Trans IGBT Chip N-CH 1200V 50A 428W 3-Pin(3+Tab) TO-247 Tube

OnsemiTO-247-3

STGW60H60DLFB

STGW60H60DLFB

STGW60H60DLFB is an Insulated Gate Bipolar Transistor (IGBT) chip featuring N-Channel conductivity

STMicroelectronics NVTO-247-3

IGB01N120H2ATMA1

IGB01N120H2ATMA1

1200 Volt N-Channel Insulated Gate Bipolar Transistor Chip

Infineon TechnologiesTO-263-3

RGS50TSX2DGC11

RGS50TSX2DGC11

10µs Short-Circuit Tolerance, 1200V 25A, FRD Built-in, Field Stop Trench IGBT

ROHM SemiconductorTO-247-3

NGB8202ANT4G

NGB8202ANT4G

IGBT 440 V 20 A 150 W Surface Mount D2PAK

LittelfuseTO-263-3

APT200GN60B2G

APT200GN60B2G

IGBT-FIELDSTOP-600V is a family of Field Stop IGBT with ultra low VCE(ON). The family is available in various current and package options

Microchip TechnologyTO-247-3

FGH40T120SMD-F155

FGH40T120SMD-F155

IGBT Transistor Chip, N-Type, 1200V Voltage, 80A Current, TO-247 Encapsulation

OnsemiTO-247-3